In-situ X-ray Photoemission Spectroscopy Study of Atomic Layer Deposition of TiO2 on Silicon Substrate

被引：25

作者：

Lee, Seung Youb ^{[1
,3
]}

Jeon, Cheolho ^{[1
,3
]}

Kim, Seok Hwan ^{[2
]}

Kim, Yooseok ^{[1
,3
]}

Jung, Woosung ^{[1
,3
]}

An, Ki-Seok ^{[2
]}

Park, Chong-Yun ^{[1
,3
]}

机构：

[1] Sungkyunkwan Univ, Phys Res Div BK21, Dept Energy Sci, Suwon 440746, Gyeonggi, South Korea

[2] Korea Res Inst Chem Technol, Thin Film Mat Res Team, Taejon 305600, South Korea

[3] Sungkyunkwan Univ, CNNC, Suwon 440746, Gyeonggi, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 03期

关键词：

SURFACE-REACTION MECHANISMS; CHEMICAL-VAPOR-DEPOSITION; DIOXIDE THIN-FILMS; TITANIUM-DIOXIDE; GROWTH; ISOPROPOXIDE; OXIDE; EPITAXY; AL2O3; WATER;

D O I：

10.1143/JJAP.51.031102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In-situ X-ray photoemission spectroscopy (XPS) has been used to investigate the initial stages of TiO2 growth on a Si(001) substrate by atomic layer deposition (ALD). The core level spectra of Si 2p, C 1s, O 1s, and Ti 2p were measured at every half reaction in the titanium tetra-isopropoxide (TTIP)-H2O ALD process. The ligand exchange reactions were verified using the periodic oscillation of the C 1s concentration, as well as changes in the hydroxyl concentration. XPS analysis revealed that Ti2O3 and Si oxide were formed at the initial stages of TiO2 growth. A stoichiometric TiO2 layer was dominantly formed after two cycles and was chemically saturated after four cycles. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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