Surface electronic properties of n- and p-type InGaN alloys

被引：14
|
作者：
King, P. D. C. [1 ]
Veal, T. D. [1 ]
Lu, Hai [2 ]
Jefferson, P. H. [1 ]
Hatfield, S. A. [1 ]
Schaff, W. J. [2 ]
McConville, C. F. [1 ]
机构：
[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
[2] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2008年 / 245卷 / 05期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1002/pssb.200778452
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
X-ray photoemission spectroscopy is utilised to determine the variation in surface Fermi level pinning across the composition range of n- and p-type c-plane In(x)Ga(1-x)N alloys. The pinning relative to the charge neutrality level is used to explain a change in band bending direction causing a transition from surface electron accumulation (In rich) to depletion (Ga-rich), at x approximate to 0.43 for n-type alloys and a transition from surface inversion to hole depletion at x approximate to 0.59 for p-type alloys where downward band bending occurs across the composition range. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：881 / 883
页数：3
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