Magnetic field enhanced terahertz emission from semiconductor surfaces

被引：0
|
作者：
McLaughlin, R [1 ]
Corchia, A [1 ]
Johnston, MB [1 ]
Ciesla, CM [1 ]
Arnone, DD [1 ]
Jones, GAC [1 ]
Linfield, EH [1 ]
Davies, AG [1 ]
Pepper, M [1 ]
机构：
[1] Univ Cambridge, Cavendish Lab, Semicond Phys Grp, Cambridge CB3 0HE, England
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present an experimental study of enhanced THz emission via surface field generation under the influence of a magnetic field for GaAs, InAs and InSb. Furthermore, we reveal the mechanism responsible for this behaviour using a Monte Carlo model of photo-generated carriers within the surface field depletion region.
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页码：178 / 179
页数：2
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