nBn detectors based on InAs/GaSb type-II strain layer superlattice

被引：48

作者：

Bishop, G. ^{[1
]}

Plis, E. ^{[1
]}

Rodriguez, J. B. ^{[1
]}

Sharma, Y. D. ^{[1
]}

Kim, H. S. ^{[1
]}

Dawson, L. R. ^{[1
]}

Krishna, S. ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2008年 / 26卷 / 03期

关键词：

D O I：

10.1116/1.2830627

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a type-II InAs/GaSb strain layer superlattice photodetector using a nBn design with cutoff wavelength of similar to 4.8 mu m at 250 K. The surface component of dark current was eliminated. Using a shallow isolation etch, low temperature dark current was reduced by two orders of magnitude compared with conventional photodiode processing. Dark current densities were equal to 2.3x10(-6) and 3.1x10(-4) A/cm(2) (V-b=0.1 V, T=77 K) for detectors with shallow isolation etch and conventional defined mesa, respectively. Quantum efficiency, responsivity, and spectral detectivity D-* of the device are presented. (C) 2008 American Vacuum Society.

引用

页码：1145 / 1148

页数：4

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