Analysis and Design of D-band High Output Power Signal Sources in 130-nm SiGe BiCMOS Process

被引：3

作者：

Zhou, Peigen ^{[1
]}

Chen, Jixin ^{[1
]}

Hou, Debin ^{[1
]}

Hong, Wei ^{[1
]}

机构：

[1] Southeast Univ, State Key Lab Millimeter Waves, Nanjing 210096, Peoples R China

来源：

2021 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS 2021) | 2021年

基金：

中国国家自然科学基金;

关键词：

Broadband; D-band; Phase noise; SiGe BiC-MOS; Signal source; VCO;

D O I：

10.1109/IWS52775.2021.9499453

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents two D-band (110-170 GHz) signal sources. By adopting high pass matching network in E-band (60-90 GHz) tripler and D-band doubler design, signal source I exhibits an excellent unwanted harmonics suppression of over 30 dBc. This chip achieves a measured peak output power of 5.6 dBm at 159 GHz, and the output frequency tuning range (TR) is from 143.2 to 168.8 GHz with -94 dBc/Hz @ 1 MHz phase noise. The output power of signal source II is enhanced by the adopted second harmonic output power enhancement technique in the design of D-band doubler. On wafer measurement of this chip shows a maximum output power of 7.5 dBm at 148 GHz, while the output frequency TR is between 136.8 and 156.2 GHz. Compared with other D-band signal sources, the proposed two signal sources achieve comparable frequency tuning range, phase noise and output power while using silicon-based processes.

引用

页数：3

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