Room temperature weak ferromagnetism and magnetoconductance in functional CuO film

被引:9
作者
Das, S. [1 ]
Majumdar, S. [1 ]
Giri, S. [1 ]
机构
[1] Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, India
关键词
CuO film; Sol-gel technique; Ferromagnetism; Semiconductor; Spintronics; SEMICONDUCTORS; BAND; ZNO; NIO;
D O I
10.1016/j.apsusc.2011.07.096
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The granular CuO films are deposited on n-Si (1 0 0) and sapphire substrates using sol-gel route. Small microstrain leads to similar to 5 times larger grain sizes (200-300 nm) and similar to 2.5 times larger film thickness (similar to 0.57 mu m) for sapphire than n-Si substrate, which are confirmed by X-ray diffraction and Atomic Force Microscopy. A diode-like current-voltage characteristics are observed for film deposited on n-Si substrate, which is absent for sapphire substrate. Typical manifestation of ferromagnetic character is observed for CuO films, which are strongly influenced by the substrates. Magnetic anisotropy is larger for sapphire substrate than n-Si substrate. At room temperature considerably large magnetoconductance similar to 21% and soft ferromagnetic character of CuO film on n-Si substrate are attractive for functional applications. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:10775 / 10779
页数:5
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