Transparent conductive oxides for Nano-SIS solar cells

被引:3
作者
Fuechsel, K. [1 ,2 ]
Bingel, A. [1 ]
Kaiser, N. [2 ]
Tuennermann, A. [1 ,2 ]
机构
[1] Univ Jena, Inst Appl Phys, Albert Einstein Str 15, D-07745 Jena, Germany
[2] Fraunhofer Inst Appl Opt & Precis Engn, D-07745 Jena, Germany
来源
SPIE ECO-PHOTONICS 2011: SUSTAINABLE DESIGN, MANUFACTURING, AND ENGINEERING WORKFORCE EDUCATION FOR A GREEN FUTURE | 2011年 / 8065卷
关键词
transparent conductive oxide; SIS solar cells; nanostructured silicon; indium tin oxide (ITO); aluminum doped zinc oxide (AZO);
D O I
10.1117/12.883239
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
As a reason of their electrical conductivity and transparency in the visible spectral range transparent conductive oxides (TCOs) are well known as electrodes for OLEDs or LCD displays. Another promising application is a semiconductor-insulator-semiconductor (SIS) solar cell, in which the TCO induces the pn junction and realises a low cost solar cell on crystalline silicon. By using nanostructured silicon interfaces broadband antireflection properties with effective light coupling into the silicon can be achieved. Combined with the SIS concept it is possible to fabricate a low cost and high efficient PV device. For the deposition of thin films of indium tin oxide (ITO) and aluminum doped zinc oxide (AZO) pulsed de magnetron sputtering is used. The paper presents the surface modification of silicon by inductive coupled plasma (ICP) etching technology, discusses the influence of different TCO materials to the device, and analyses the optical and structural properties of the cells. Furthermore, the solar cell performance under AM1.5G illumination will be shown.
引用
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页数:6
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