Oxygen atom-induced D2 and D2O desorption on D/Si(111) surfaces

被引:3
|
作者
Rahman, F [1 ]
Khanom, F [1 ]
Inanaga, S [1 ]
Tsurumaki, H [1 ]
Namiki, A [1 ]
机构
[1] Kyushu Inst Technol, Dept Elect Engn, Kitakyushu, Fukuoka 8048550, Japan
关键词
radio frequency; spectroscopy; semiconductors;
D O I
10.1016/S0169-4332(03)00864-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We studied reaction of oxygen atoms with D-terminated Si(111) surfaces from a desorption point of view. As the D (1 ML)/ Si(111) surface was exposed to O atoms D-2 and D2O molecules were found to desorb from the surface. The desorption kinetics of D-2 and D2O molecules exhibited a feature characterized with a quick rate jump at the very beginning of O exposure, which was followed by a gradual increase with a delayed maximum and then by an exponential decrease. The O-induced D-2 desorption spectra as a function of T-s appeared to be very similar to the H-induced D-2 desorption spectrum from the D/Si(111) surfaces. Possible mechanisms for the O-induced desorption reactions were discussed. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:1 / 6
页数:6
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