Electrical characterization of low defect density nonpolar (11(2)over-bar0) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)

被引：0

作者：

Imer, Bilge ^{[1
,2
]}

Haskell, Benjamin ^{[1
,2
]}

Rajan, Siddharth ^{[3
]}

Keller, Stacia ^{[3
]}

Mishra, Umesh K. ^{[3
]}

Nakamura, Shuji ^{[1
,2
,3
]}

Speck, James S. ^{[1
,2
]}

DenBaars, Steven P. ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, NICP ERATO JST Grp, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF MATERIALS RESEARCH | 2008年 / 23卷 / 02期

关键词：

D O I：

10.1557/JMR.2008.0069

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the effect of extended defects on electrical characteristics of Si doped n-type nonpolar a-plane GaN films. The n-type GaN layers were grown on co-loaded reduced defect density sidewall lateral epitaxial overgrowth (SLEO) a-plane GaN templates and high defect density planar a-plane GaN templates by metalorganic chemical vapor deposition (MOCVD). The highest conductivity value was observed at the carrier concentration of 1.05 x 10(19) cm(-3) as 261.12 cm(2)/Vs for SLEO a-GaN and 106.77 cm(2)/Vs for the planar a-plane GaN samples. At the same doping level, the carrier compensation for SLEO samples was similar to 12% less than planar samples.

引用

页码：551 / 555

页数：5

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