Electrical characterization of low defect density nonpolar (11(2)over-bar0) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)

被引：0

作者：

Imer, Bilge ^{[1
,2
]}

Haskell, Benjamin ^{[1
,2
]}

Rajan, Siddharth ^{[3
]}

Keller, Stacia ^{[3
]}

Mishra, Umesh K. ^{[3
]}

Nakamura, Shuji ^{[1
,2
,3
]}

Speck, James S. ^{[1
,2
]}

DenBaars, Steven P. ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, NICP ERATO JST Grp, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF MATERIALS RESEARCH | 2008年 / 23卷 / 02期

关键词：

D O I：

10.1557/JMR.2008.0069

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the effect of extended defects on electrical characteristics of Si doped n-type nonpolar a-plane GaN films. The n-type GaN layers were grown on co-loaded reduced defect density sidewall lateral epitaxial overgrowth (SLEO) a-plane GaN templates and high defect density planar a-plane GaN templates by metalorganic chemical vapor deposition (MOCVD). The highest conductivity value was observed at the carrier concentration of 1.05 x 10(19) cm(-3) as 261.12 cm(2)/Vs for SLEO a-GaN and 106.77 cm(2)/Vs for the planar a-plane GaN samples. At the same doping level, the carrier compensation for SLEO samples was similar to 12% less than planar samples.

引用

页码：551 / 555

页数：5

共 50 条

[11] Characterization of InGaN structures grown by epitaxial lateral overgrowth over a-plane GaN template [J].

Miasojedovas, Saulius ;

Jursenas, Saulius ;

Kuokstis, Edmundas ;

Zukauskas, Arturas ;

Gaevski, Mikhail E. ;

Lee, Jiawei ;

Shatalov, Maxim ;

Gong, Zheng ;

Adivarahan, Vinod ;

Sattu, Ajay ;

Mokina, Irina ;

Yang, Jinwei ;

Khan, M. Asif .

OPTICA APPLICATA, 2006, 36 (2-3) :351-358

[12] Structural characterization of nonpolar (11(2)over-bar0) a-plane GaN thin films grown on (1(1)over-bar02) r-plane sapphire [J].

Craven, MD ;

Lim, SH ;

Wu, F ;

Speck, JS ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 2002, 81 (03) :469-471

[13] Nonpolar (11(2)over-bar0) a-plane gallium nitride thin films grown on (1(1)over-bar02) r-plane sapphire:: Heteroepitaxy and lateral overgrowth [J].

Craven, MD ;

Lim, SH ;

Wu, F ;

Speck, JS ;

DenBaars, SP .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2002, 194 (02) :541-544

[14] Threading dislocation reduction via laterally overgrown nonpolar (11(2)over-bar0) a-plane GaN [J].

Craven, MD ;

Lim, SH ;

Wu, F ;

Speck, JS ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 2002, 81 (07) :1201-1203

[15] Increase of free carrier lifetime in nonpolar a-plane GaN grown by epitaxial lateral overgrowth [J].

Jursènas, S ;

Kuokstis, E ;

Miasojedovas, S ;

Kurilcik, G ;

Zukauskas, A ;

Chen, CQ ;

Yang, JW ;

Adivarahan, V ;

Khan, MA .

APPLIED PHYSICS LETTERS, 2004, 85 (05) :771-773

[16] Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density [J].

Ling, Shih-Chun ;

Chao, Chu-Li ;

Chen, Jun-Rong ;

Liu, Po-Chun ;

Ko, Tsung-Shine ;

Lu, Tien-Chang ;

Kuo, Hao-Chung ;

Wang, Shing-Chung ;

Cheng, Shun-Jen ;

Tsay, Jenq-Dar .

APPLIED PHYSICS LETTERS, 2009, 94 (25)

[17] Band-edge photoluminescence and reflectivity of nonpolar (11(2)over-bar0) and semipolar (11(2)over-bar2) GaN formed by epitaxial lateral overgrowth on sapphire [J].

Guehne, T. ;

Bougrioua, Z. ;

Lauegt, S. ;

Nemoz, M. ;

Vennegues, P. ;

Vinter, B. ;

Leroux, M. .

PHYSICAL REVIEW B, 2008, 77 (07)

[18] Ohmic Contact Properties of Photo-Chemically Etched Nonpolar A-Plane (11(2)over-bar0) GaN Films [J].

Baik, Kwang Hyeon ;

Lee, Sohyun ;

Jang, Soohwan .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (11) :S3001-S3004

[19] Dielectric Response of Nonpolar a-plane (11(2)over-bar0) ZnO Crystals in the Terahertz Frequency [J].

Jang, Soohwan ;

Parke, Jaehun ;

Kim, Seongheun ;

Baik, Kwang Hyeon .

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 16 (11) :11599-11602

[20] Sheet carrier density enhancement by Si3N4 passivation on nonpolar a-plane (11(2)over-bar0) sapphire grown AlGaN/GaN heterostructures [J].

Arulkumaran, S. ;

Selvaraj, S. Lawrence ;

Egawa, T. ;

Ng, G. I. .

APPLIED PHYSICS LETTERS, 2008, 92 (09)

← 1 2 3 4 5 →