Electrical characterization of low defect density nonpolar (11(2)over-bar0) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)

被引：0
作者：
Imer, Bilge [1 ,2 ]
Haskell, Benjamin [1 ,2 ]
Rajan, Siddharth [3 ]
Keller, Stacia [3 ]
Mishra, Umesh K. [3 ]
Nakamura, Shuji [1 ,2 ,3 ]
Speck, James S. [1 ,2 ]
DenBaars, Steven P. [1 ,2 ]
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, NICP ERATO JST Grp, Santa Barbara, CA 93106 USA
[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
JOURNAL OF MATERIALS RESEARCH | 2008年 / 23卷 / 02期
关键词：
D O I：
10.1557/JMR.2008.0069
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We studied the effect of extended defects on electrical characteristics of Si doped n-type nonpolar a-plane GaN films. The n-type GaN layers were grown on co-loaded reduced defect density sidewall lateral epitaxial overgrowth (SLEO) a-plane GaN templates and high defect density planar a-plane GaN templates by metalorganic chemical vapor deposition (MOCVD). The highest conductivity value was observed at the carrier concentration of 1.05 x 10(19) cm(-3) as 261.12 cm(2)/Vs for SLEO a-GaN and 106.77 cm(2)/Vs for the planar a-plane GaN samples. At the same doping level, the carrier compensation for SLEO samples was similar to 12% less than planar samples.
引用
收藏
页码：551 / 555
页数：5
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