Organofluoro silicate glass:: A dense low-k dielectric with superior materials properties

被引：6

作者：

Cheng, Y. L. ^{[2
,3
]}

Wang, Y. L. ^{[1
,3
]}

Juang, Yungder ^{[1
]}

O'Neill, M. L. ^{[4
]}

Lukas, A. S. ^{[4
]}

Karwacki, E. J. ^{[4
]}

NlcGuian, S. A. ^{[5
]}

Tang, Allen ^{[5
]}

Wu, C. L. ^{[5
]}

机构：

[1] Natl Univ Tainan, Dept Mat Sci, Tainan, Taiwan

[2] Natl Chi Nan Univ, Dept Elect Engn, Nantou, Taiwan

[3] Natl Chiayi Univ, Dept Appl Phys, Chiayi, Taiwan

[4] Air Prod & Chem Inc, Electr Technol, Allentown, PA USA

[5] Air Prod Asia Inc, Taipei, Taiwan

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2008年 / 69卷 / 2-3期

关键词：

D O I：

10.1016/j.jpcs.2007.11.019

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Organofluorosilicate glass (OFSG) films with the composition Si:O:C:H:F were deposited using plasma-enhanced chemical vapor deposition (PECVD) using the mixtures of trimethylsilane (3MS), silicon tetrafluoride (SiF4) and oxygen(O-2). OFSG films have better mechanical strength, thermo-oxidative stability and adhesion ability as compared with those of organosilicate glass (OSG) films deposited from 3MS and O-2. We found that the increased density of OFSG films, which helped improving mechanical strength, was balanced by the presence of non-polarizableSi-F functionality, which leads to a lower dielectric constant and appeared to be a promising low-k material for interlayer dielectrics application. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：518 / 522

页数：5

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