Formation of the patterned nano-crystalline Si by pulsed laser interference crystallization of a-Si:H thin films

被引：1

作者：

Wang, MX ^{[1
]}

Chen, KJ ^{[1
]}

Jiang, M ^{[1
]}

Liu, XY ^{[1
]}

Wu, ZC ^{[1
]}

Li, W ^{[1
]}

Wang, M ^{[1
]}

Huang, XF ^{[1
]}

机构：

[1] Nanjing Univ, Solid State Microstruct Lab, Nanjing 210093, Peoples R China

来源：

LASER PROCESSING OF MATERIALS AND INDUSTRIAL APPLICATIONS II | 1998年 / 3550卷

关键词：

phase-shift grating; interference crystallization; nano-crystalline Si;

D O I：

10.1117/12.317890

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a new method of preparing patterned nano-crystalline Si (nc-Si) by pulsed laser interference. crystallization of a-Si:H thin films. A KrF excimer pulsed laser with wavelength 248 nm and pulse duration 30 ns is employed as a coherent ultra-violet beam source; a one-/two- dimensional (1D/2D) silica phase-shifting grating is used to form a high-contrast laser interference pattern behind it. During the laser treatment, the a-Si:H film is placed behind near contact with the phase grating. A transient thermal 1D/2D grid is then directly formed on the sample, leading to the local crystallization of the a-Si:H films and forming of nano-crystalline Si. The crystallinity of nc-Si films is verified by Raman scattering. Atomic force microscopy clearly shows a morphology of 1D/2D regular sub-micron patterns formed by locally crystallized stripes/dots, which are composed of densely gathered crystallites with a lateral size of similar to 50-100 nm and a height of similar to 10-20 nm. The interfaces between the crystallized and the amorphous zones are abrupt. Transmission electron microscopy demonstrates a lateral size distribution of nc-Si within the crystallized zones. This new approach has a potential application in the nano-electronics and nano-optoelectronics.

引用

页码：80 / 84

页数：5