Diamond overgrown InAlN/GaN HEMT

被引：63

作者：

Alomari, M. ^{[1
]}

Dipalo, M. ^{[1
]}

Rossi, S. ^{[1
]}

Diforte-Poisson, M. -A. ^{[2
]}

Delage, S. ^{[2
]}

Carlin, J. -F. ^{[3
]}

Grandjean, N. ^{[3
]}

Gaquiere, C. ^{[4
]}

Toth, L. ^{[5
]}

Pecz, B. ^{[5
]}

Kohn, E. ^{[1
]}

机构：

[1] Univ Ulm, Inst Elect Devices & Circuits, D-89081 Ulm, Germany

[2] Alcatel Thales III V Lab, F-91460 Marcoussis, France

[3] Ecole Polytech Fed Lausanne, Lab Adv Semicond Photon & Elect, CH-1015 Lausanne, Switzerland

[4] Univ Lille, IEMN, F-60069 Lille, France

[5] Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary

来源：

关键词：

GaN HEMT; Nanocrystalline diamond; High temperature growth; InAlN/GaN; FILMS; NUCLEATION; GANHEMTS;

D O I：

10.1016/j.diamond.2011.01.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work the technology and characterization of nanocrystalline diamond (NCD) films directly grown on InAlN/GaN HEMTs is presented. Optimization of GaN based HEMT process steps including metallization stacks is discussed. A fully processed InAlN/GaN HEMT structure with 7 nm barrier has been overgrown in a temperature range of 750 degrees C to 800 degrees C with a 500 nm thick nanocrystalline diamond film in a Hot Filament CVD system. First results of semi-enhancement mode of DC and RF HEMT operation are reported. The grown NCD films were characterized by SEM, TEM, and Raman spectroscopy. Although no direct thermal conductivity measurements are conducted yet; the performed experiments shows the compatibility of growing high quality NCD films, several microns thick. on InAlN/GaN HEMTs as a potential material for heat extraction purposes. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：604 / 608

页数：5

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