Deep level defects in GaAs1-xBix/GaAs heterostructures

被引：15

作者：

Jiang, Zenan ^{[1
]}

Beaton, D. A. ^{[2
]}

Lewis, R. B. ^{[2
,3
]}

Basile, A. F. ^{[1
]}

Tiedje, T. ^{[3
]}

Mooney, P. M. ^{[1
]}

机构：

[1] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

[2] Univ British Columbia, Dept Phys & Astron, Vancouver, BC V5Z 1M9, Canada

[3] Univ Victoria, Dept Elect & Comp Engn, Victoria, BC, Canada

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2011年 / 26卷 / 05期

关键词：

GAAS; SPECTROSCOPY; EPITAXY; GROWTH; TRAPS; ALLOY; BULK;

D O I：

10.1088/0268-1242/26/5/055020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Deep level transient spectroscopy (DLTS) measurements were performed on p-i-n diodes having i-regions that include a GaAs1-xBix layer sandwiched between two GaAs layers, all grown at T < 400 degrees C. A GaAs1 Bi-x(x)/GaAs heterostructure with Bi fraction x = 4.7% grown at 285 degrees C was found to have several traps in concentrations of similar to 5 x 10(15) cm(-3). The location of the observed traps in the i-region is determined from simulations of the band diagrams of these devices at the bias conditions used for the DLTS measurements and confirmed by DLTS spectra taken at various filling voltages.

引用

页数：7

共 17 条

[1] Temperature dependence of hole mobility in GaAs1-xBix alloys [J].