A novel two-step laser crystallization technique for low-temperature poly-Si TFTs

被引：3

作者：

Zeng, XB ^{[1
]}

Xu, ZY

Sin, JKO

Dai, YB

Wang, CG

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

[2] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 05期

关键词：

laser crystallization; low temperature poly-Si; thin film transistors;

D O I：

10.1109/16.918253

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present investigations on a novel technique for preparing low-temperature poly-Si thin-film on glass substrate using two-step laser crystallization. In the first step, seeds are created by excimer laser induced crystallization of very thin (M nm) amorphous silicon (a-Si) thin-film deposited by plasma enhanced chemical vapor deposition (PECVD), A second (a-Si) thin-film of 80-120 nm is used to obtain large crystalline grains grown around the seed crystallites during the second laser crystallization. Using this two-step crystallization (TSC) approach, we fabricated poly-Si thin-film transistors (TFTs) with electron mobility of 103 cm(2)/V.s and ON/OFF current ratio of 10(7). They are two times and four times higher than those of the poly-Si TFTs fabricated in the same run using conventional single-step excimer laser crystallization.

引用

页码：1008 / 1010

页数：3

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