A novel two-step laser crystallization technique for low-temperature poly-Si TFTs

被引:3
作者
Zeng, XB [1 ]
Xu, ZY
Sin, JKO
Dai, YB
Wang, CG
机构
[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
[2] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China
关键词
laser crystallization; low temperature poly-Si; thin film transistors;
D O I
10.1109/16.918253
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present investigations on a novel technique for preparing low-temperature poly-Si thin-film on glass substrate using two-step laser crystallization. In the first step, seeds are created by excimer laser induced crystallization of very thin (M nm) amorphous silicon (a-Si) thin-film deposited by plasma enhanced chemical vapor deposition (PECVD), A second (a-Si) thin-film of 80-120 nm is used to obtain large crystalline grains grown around the seed crystallites during the second laser crystallization. Using this two-step crystallization (TSC) approach, we fabricated poly-Si thin-film transistors (TFTs) with electron mobility of 103 cm(2)/V.s and ON/OFF current ratio of 10(7). They are two times and four times higher than those of the poly-Si TFTs fabricated in the same run using conventional single-step excimer laser crystallization.
引用
收藏
页码:1008 / 1010
页数:3
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