Highly Photosensitive Dual-Gate a-Si:H TFT and Array for Low-Dose Flat-Panel X-Ray Imaging

被引：6

作者：

Liu, Xinghui ^{[1
]}

Ou, Hai ^{[2
]}

Chen, Jun ^{[2
]}

Deng, Shaozhi ^{[2
]}

Xu, Ningsheng ^{[2
]}

Wang, Kai ^{[1
,3
]}

机构：

[1] Sun Yat sen Univ Carnegie Mellon Univ Shunde Int, Foshan 528300, Peoples R China

[2] Sun Yat Sen Univ, Sch Microelect, Guangzhou 520275, Guangdong, Peoples R China

[3] Sun Yat Sen Univ, Sch Elect & Informat Technol, Sun Yat Sen Univ Carnegie Mellon Univ Joint Inst, Guangzhou, Guangdong, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2016年 / 28卷 / 18期

基金：

中国国家自然科学基金;

关键词：

Low-dose X-ray imaging; active pixel sensor; dual-gate photosensitive TFT; smart pixel; THIN-FILM-TRANSISTOR; ACTIVE PIXEL SENSOR; CHANNEL;

D O I：

10.1109/LPT.2016.2579199

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Amorphous silicon thin-film transistors (TFTs) have been widely used to build flat-panel X-ray detectors for medical imaging. To meet the growing demand for low dose and high sensitivity, attention has been paid to active pixel sensor (APS) with high signal-to-noise-ratio (SNR). However, most APS architectures generally require multiple TFTs in one pixel, resulting in low fill factor, low spatial resolution, and discounted SNR. We proposed a smart pixel architecture based on a dual-gate photosensitive TFT that combines sensor, switch, and storage into one TFT intended for high fill factor, high spatial resolution, and high SNR. This letter aims to investigate the sensitivity and noise performance of the smart pixel along with the evaluation of the first 4 x 4 smart pixel sensor array.

引用

页码：1952 / 1955

页数：4

共 35 条

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