GaN Power ICs: Reviewing Strengths, Gaps, and Future Directions

被引：25

作者：

Trescases, O. ^{[1
]}

Murray, S. K. ^{[1
]}

Jiang, W. L. ^{[1
]}

Zaman, M. S. ^{[1
]}

机构：

[1] Univ Toronto, Edward S Rogers Sr Dept Elect & Comp Engn, Toronto, ON, Canada

来源：

2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2020年

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1109/IEDM13553.2020.9371918

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews monolithic GaN integration for power ICs, focusing on current technological capabilities. We highlight key opportunities for integrating low-voltage circuits alongside power devices to support converter operation. Simulations and experimental results from the imec 200V GaNon-SOI and ON Semiconductor 650V GaN-on-Si processes provide quantitative insights for digital and analog circuitry.

引用

页数：4

共 22 条

[1]

Alhomsi M., 2020, FORECASTING EXCHANGE

[2] The 2018 GaN power electronics roadmap [J].

Amano, H. ;

Baines, Y. ;

Beam, E. ;

Borga, Matteo ;

Bouchet, T. ;

Chalker, Paul R. ;

Charles, M. ;

Chen, Kevin J. ;

Chowdhury, Nadim ;

Chu, Rongming ;

De Santi, Carlo ;

De Souza, Maria Merlyne ;

Decoutere, Stefaan ;

Di Cioccio, L. ;

Eckardt, Bernd ;

Egawa, Takashi ;

Fay, P. ;

Freedsman, Joseph J. ;

Guido, L. ;

Haeberlen, Oliver ;

Haynes, Geoff ;

Heckel, Thomas ;

Hemakumara, Dilini ;

Houston, Peter ;

Hu, Jie ;

Hua, Mengyuan ;

Huang, Qingyun ;

Huang, Alex ;

Jiang, Sheng ;

Kawai, H. ;

Kinzer, Dan ;

Kuball, Martin ;

Kumar, Ashwani ;

Lee, Kean Boon ;

Li, Xu ;

Marcon, Denis ;

Maerz, Martin ;

McCarthy, R. ;

Meneghesso, Gaudenzio ;

Meneghini, Matteo ;

Morvan, E. ;

Nakajima, A. ;

Narayanan, E. M. S. ;

Oliver, Stephen ;

Palacios, Tomas ;

Piedra, Daniel ;

Plissonnier, M. ;

Reddy, R. ;

Sun, Min ;

Thayne, Iain .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (16)

[3]

Chen H.-Y., 2020, VLSI

[4]

Chen Y., 2019, ISSCC

[5]

Chowdhury N., 2019, EDL

[6]

Disney D., 2017, ISPSD

[7]

Fei C., 2019, JESTPE

[8]

He J., 2019, ISPSD

[9]

Huang Q., 2019, TPE

[10]

Huang Y., 2020, ISSCC

← 1 2 3 →