Laser annealing of epitaxial CaF2 films on Si

被引：0

作者：

Dvurechenskii, A., V ^{[1
,2
]}

Smagina, Zh, V ^{[1
]}

Volodin, V. A. ^{[1
,2
]}

Kacyuba, A., V ^{[1
]}

Zinovyev, V. A. ^{[1
]}

Ivlev, G. D. ^{[3
]}

Prakopyeu, S. L. ^{[3
]}

机构：

[1] Russian Acad Sci, AV Rzhanov Inst Semicond Phys, Siberian Branch, 13 Lavrentiev Aven, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Novosibirsk 630090, Russia

[3] Belarusian State Univ, Dept Radiophys & Comp Sci, 4 Nezavisimosti Aven, Minsk 220030, BELARUS

来源：

THIN SOLID FILMS | 2021年 / 735卷

关键词：

Calcium fluoride; Silicon; Epitaxy; Laser annealing; ELECTRICAL CHARACTERISTICS; VIBRATIONAL SPECTROSCOPY; QUANTUM DOTS; SILICON; RAMAN; GROWTH; DIODE;

D O I：

10.1016/j.tsf.2021.138898

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanosecond time-resolved reflectivity and transmission changes in CaF2/Si(111) structures were measured to study the phase transitions, surface modification and radiolysis induced by nanosecond ruby laser pulses. The Si lattice heating up to the melting point leads to the nanohills formation on the surface of the structure, the height of which does not exceed 100 nm with the average base diameter of 360 nm and the surface density of 2.10(8)cm(2). The Raman scattering and energy-dispersive X-ray spectroscopy data indicate that the nanohills contain cavities inside them, and they are filled with the gas of Si2F6 molecules. The shell of the nanohills, obviously, consists of calcium oxide.

引用

页数：5

共 19 条

[1]

Dvurechenskii AV, 2017, ADVANCES IN SEMICONDUCTOR NANOSTRUCTURES: GROWTH, CHARACTERIZATION, PROPERTIES AND APPLICATIONS, P367, DOI 10.1016/B978-0-12-810512-2.00015-9

[2] Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors [J].