A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation

被引：11

作者：

Lime, F. ^{[1
]}

Ritzenthaler, R. ^{[1
]}

Ricoma, M. ^{[2
]}

Martinez, F. ^{[3
]}

Pascal, F. ^{[3
]}

Miranda, E. ^{[2
]}

Faynot, O. ^{[4
]}

Iniguez, B. ^{[1
]}

机构：

[1] Univ Rovira & Virgili, Dept Elect Engn & Automat, Tarragona 43007, Spain

[2] Univ Autonoma Barcelona, Bellaterra 08193, Cerdanyola vall, Spain

[3] Univ Montpellier 2, CNRS, UMR 5214, IES, F-34095 Montpellier, France

[4] LETI CEA, F-38054 Grenoble, France

来源：

SOLID-STATE ELECTRONICS | 2011年 / 57卷 / 01期

关键词：

ADGMOSFET; Compact modeling; FD SOI; SOI; UTB SOI MOSFET; SYMMETRIC DG; CHARGE;

D O I：

10.1016/j.sse.2010.11.034

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a new compact charge based DC model for the drain current of long channel fully depleted ultra-thin body SOI MOSFETs and asymmetric double-gate MOSFETs with independent gate operation (ADGMOSFETs) is presented. The model was validated by both TCAD simulations and electrical measurements with a good agreement. In particular, great care was taken during the derivation of the model in order to respect the physics of the device and to make the correct approximations. The obtained solutions can be viewed as a generalization of classical MOS theory to the case of undoped fully depleted ADGMOS. As a result, the model consists of relatively simple equations and is a promising approach for the compact modeling and parameter extraction of fully depleted SOI transistors. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：61 / 66

页数：6

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