Investigation on the material properties of ZnO nanorods deposited on Ga-doped ZnO seeded glass substrate: Effects of CBD precursor concentration
被引:3
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作者:
Ungula, Jatani
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Univ Free State, Dept Phys, ZA-9300 Bloemfontein, South Africa
Kenya Methodist Univ, Dept Pure & Appl Sci, Meru, KenyaUniv Free State, Dept Phys, ZA-9300 Bloemfontein, South Africa
Ungula, Jatani
[1
,2
]
Kiprotich, Sharon
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机构:
Univ Free State, Dept Phys, ZA-9300 Bloemfontein, South Africa
Muranga Univ Technol, Dept Phys & Biol Sci, Muranga, KenyaUniv Free State, Dept Phys, ZA-9300 Bloemfontein, South Africa
Kiprotich, Sharon
[1
,3
]
Swart, Hendrick C.
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Univ Free State, Dept Phys, ZA-9300 Bloemfontein, South AfricaUniv Free State, Dept Phys, ZA-9300 Bloemfontein, South Africa
Swart, Hendrick C.
[1
]
Dejene, Birhanu F.
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Walter Sisulu Univ Mthatha, Dept Phys, Mthatha, South AfricaUniv Free State, Dept Phys, ZA-9300 Bloemfontein, South Africa
Dejene, Birhanu F.
[4
]
机构:
[1] Univ Free State, Dept Phys, ZA-9300 Bloemfontein, South Africa
[2] Kenya Methodist Univ, Dept Pure & Appl Sci, Meru, Kenya
band gap;
DSSCs;
emissions;
photoanode;
semiconductor;
ZNRs;
CHEMICAL BATH DEPOSITION;
OPTICAL-PROPERTIES;
THIN-FILMS;
CONTROLLED GROWTH;
NANOPARTICLES;
MORPHOLOGY;
EMISSION;
ARRAYS;
PHOTOLUMINESCENCE;
LUMINESCENCE;
D O I:
10.1002/sia.7127
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Optimized Ga-doped ZnO (GZO) seed layer was coated onto a glass substrate where ZnO nanorods (ZNRs) were grown via a facile chemical bath deposition (CBD) technique. The concentrations ([Zn (NO3)(2)]/[C6H12N4]) ratio was maintained at 1, at 90 degrees C for 90 min. Lower thermodynamic barrier was used. This was achieved by growing a GZO NPs seed layer that provided nucleation sites which in turn enhanced the optical properties and the aspect ratios hence ensuring uniform distribution of ZNRs. Investigations of CBD growth concentrations (0.005, 0.03, 0.05, 0.07, and 0.1 M) effects on the material properties of ZNRs were carried out. The as-prepared ZNRs displayed crystalline wurtzite structures. The observed structure had c-axis preference in most of the obtained samples. An increase in size of the crystallites and 002 peak intensity was observed as the growth concentration increased. The SEM micrographs and AFM images showed a direct relation between the length, particle size of the ZNRs, and the precursor concentration. Similarly, the PL spectra showed the excitonic peak intensity increased to a maximum at a precursor concentration of 0.05 M and decayed as the concentration levels increased. Enhancement of the UV and visible light emissions intensity ratios of the ZNRs prepared at lower concentrations was also observed. This is an indication of high optical quality. A higher %T at lower growth concentration and variation of the band gap energy values (3.10-2.30 eV) as the growth concentration is increased were observed from the UV-VIS analysis. The as-prepared ZNRs samples deposited on GZO transparent conducting film were highly luminescent composing of well-aligned ZNRs and perfect crystallization obtained at the 0.05 equimolar precursor concentration of [Zn (NO3)(2)]/[C6H12N4] solution. The as-grown ZNRs with the observed material properties can be applied in dye-sensitized solar cells production, serving as a photoanode.
机构:
Pusan Natl Univ, Dept Mat Sci & Engn, Pusan 609735, South KoreaPusan Natl Univ, Dept Mat Sci & Engn, Pusan 609735, South Korea
Lee, Jung-Chul
Kim, Yang-Do
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Pusan Natl Univ, Dept Mat Sci & Engn, Pusan 609735, South KoreaPusan Natl Univ, Dept Mat Sci & Engn, Pusan 609735, South Korea
Kim, Yang-Do
Song, Pung-Keun
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Pusan Natl Univ, Dept Mat Sci & Engn, Pusan 609735, South KoreaPusan Natl Univ, Dept Mat Sci & Engn, Pusan 609735, South Korea
Song, Pung-Keun
Lee, Jin-Ho
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机构:
Samsung Corning Precis Glass R&D Ctr, Nano Mat Lab, Suwon 443270, South KoreaPusan Natl Univ, Dept Mat Sci & Engn, Pusan 609735, South Korea
Lee, Jin-Ho
Kim, Young-Seok
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机构:
Busan Res Ctr Adv Mfg Technol Team, Korea Inst Ind Technol, Pusan 609735, South KoreaPusan Natl Univ, Dept Mat Sci & Engn, Pusan 609735, South Korea
Kim, Young-Seok
Son, Chang-Sik
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机构:
Silla Univ, Dept Elect Mat Engn, Pusan 617736, South KoreaPusan Natl Univ, Dept Mat Sci & Engn, Pusan 609735, South Korea
机构:
Univ Pretoria, Dept Phys, Private Bag X20, Hatfield, Herts, South Africa
Univ Dodoma, Coll Nat & Math Sci, Sch Phys Sci, Dept Phys, POB 338, Dodoma, TanzaniaUniv Pretoria, Dept Phys, Private Bag X20, Hatfield, Herts, South Africa
Mwankemwa, Benard S.
Legodi, Matshisa J.
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Univ Pretoria, Dept Phys, Private Bag X20, Hatfield, Herts, South AfricaUniv Pretoria, Dept Phys, Private Bag X20, Hatfield, Herts, South Africa
Legodi, Matshisa J.
Mlambo, Mbuso
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机构:
Univ Pretoria, Dept Phys, Private Bag X20, Hatfield, Herts, South AfricaUniv Pretoria, Dept Phys, Private Bag X20, Hatfield, Herts, South Africa
Mlambo, Mbuso
Nel, Jackie M.
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Univ Pretoria, Dept Phys, Private Bag X20, Hatfield, Herts, South AfricaUniv Pretoria, Dept Phys, Private Bag X20, Hatfield, Herts, South Africa