Ultraviolet absorption sensors for precursor delivery rate control for metalorganic chemical vapor deposition of multiple component oxide thin films

被引:10
作者
DeSisto, WJ
Rappoli, BJ
机构
[1] USN, Res Lab, Div Elect Sci & Technol, Washington, DC 20375 USA
[2] USN, Res Lab, Div Chem, Washington, DC 20375 USA
关键词
D O I
10.1016/S0022-0248(98)00211-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We report the development of sensors for measuring the concentration of 2,2,6,6-tetramethyl-3,5-heptanedionate (thd) complexes of yttrium and copper in-situ, in the gas delivery system of a metalorganic chemical vapor deposition (MOCVD) reactor. The gas delivery system was modified to incorporate dual-beam ultraviolet absorption sensors accessed remotely with fiber optics. Spectral data were acquired for individual precursors at 4 s intervals using spectrograph/photodiode arrays. The measured absorption for individual precursors was used to determine concentration in the gas stream. Using the measured concentration, feedback control of the yttrium and copper thd complex molar flow rates was demonstrated to be better than one-half of one percent of the desired molar flow rate. (C) 1998 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码:290 / 293
页数:4
相关论文
共 21 条
[1]   MONITORING OF MOCVD REACTANTS BY UV ABSORPTION [J].
BAUCOM, KC ;
KILLEEN, KP ;
MOFFAT, HK .
JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (11) :1703-1706
[2]  
BROWNIGG J, 1995, SPECTROSC, V10, P39
[3]   VARIATIONS IN TRIMETHYLINDIUM PARTIAL-PRESSURE MEASURED BY AN ULTRASONIC CELL ON MOVPE REACTOR [J].
BUTLER, BR ;
STAGG, JP .
JOURNAL OF CRYSTAL GROWTH, 1989, 94 (02) :481-487
[4]   INSITU, REAL-TIME DIAGNOSTICS OF OMVPE USING IR-DIODE LASER SPECTROSCOPY [J].
BUTLER, JE ;
BOTTKA, N ;
SILLMON, RS ;
GASKILL, DK .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :163-171
[5]  
DESISTO W, 1997, J CRYST GROWTH, V170, P170
[6]  
DESISTO WJ, Patent No. 5652431
[7]   MOVPE GROWTH OF INSB ON GAAS SUBSTRATES [J].
GRAHAM, RM ;
MASON, NJ ;
WALKER, PJ ;
FRIGO, DM ;
GEDRIDGE, RW .
JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :363-370
[8]   INSITU MEASUREMENT OF THE METALORGANIC AND HYDRIDE PARTIAL PRESSURES IN A MOCVD REACTOR USING ULTRAVIOLET-ABSORPTION SPECTROSCOPY [J].
HEBNER, GA ;
KILLEEN, KP ;
BIEFELD, RM .
JOURNAL OF CRYSTAL GROWTH, 1989, 98 (03) :293-301
[9]   CHEMICAL-VAPOR-DEPOSITION OF HIGH-T(C) SUPERCONDUCTING THIN-FILMS [J].
LESKELA, M ;
MOLSA, H ;
NIINISTO, L .
SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 1993, 6 (09) :627-656
[10]   Preparation and structural characterization of, and chemical vapor deposition studies with, certain yttrium tris(beta-diketonate) compounds [J].
Luten, HA ;
Rees, WS ;
Goedken, VL .
CHEMICAL VAPOR DEPOSITION, 1996, 2 (04) :149-161