Magnetoluminescence studies in InGaP alloys

We have measured both the diamagnetic shift and the linewidth of an excitonic transition in In0.48Ga0.52P as a function of magnetic field up to 22 T at 4.2 K using photoluminescence spectroscopy. The sample was grown on a GaAs substrate using low-pressure metalorganic vapor phase epitaxy at 700 degreesC. The substrate was misoriented by 15 degrees from [001] towards [011] direction. We find that the variations of both the diamagnetic shift and the linewidth with magnetic field are about one half of those reported earlier [E. D. Jones, R. P. Schneider, Jr., S. M. Lee, and K. K. Bajaj, Phys. Rev. B 46, 7225 (1992)] in a In0.48Ga0.52P sample grown with only 2 degrees misorientation and also those calculated using a free exciton model. We suggest that this behavior may be due to the fact that our sample was grown with much larger misorietation. We have calculated both of these variations using a model in which we assume that in this sample the hole is completely localized and find an excellent agreement with the observed data. (C) 2000 American Institute of Physics. [S0003-6951(00)02652-8].