Photoacoustic and photoluminescence studies of H+ ion-implanted n-GaAs

被引：2
|
作者：
Srinivasan, R
Sanjeeviraja, C
Ramachandran, K [1 ]
机构：
[1] Madurai Kamaraj Univ, Sch Phys, Madurai 625021, Tamil Nadu, India
[2] Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India
[3] Thiagarajar Coll, Dept Phys, Madurai 625009, Tamil Nadu, India
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 03期
关键词：
D O I：
10.1002/pssa.200406931
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The surface of silicon-doped GaAs (100) grown by the vertical Bridgman method has been implanted with H+ ions at 30 keV for various doses from 10(14) to 10(17) cm(-2) and studied using photoacoustic and photoluminescence spectroscopy to understand the effects of hydrogen ion implantation on GaAs:Si. The results are compared with Raman measurements. All the measurements confirm the sign change of charge carriers at a dose of 10(15) cm(-2). (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：419 / 424
页数：6
相关论文
共 50 条
  • [41] PROPERTIES OF ION-IMPLANTED GAAS DIODES
    ROUGHAN, PE
    MANCHESTER, KE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 278 - +
  • [42] YB LUMINESCENCE IN ION-IMPLANTED GAAS
    KONNOV, VM
    LARIKOVA, TV
    LOYKO, NN
    DRAVIN, VA
    USHAKOV, VV
    GIPPIUS, AA
    SOLID STATE COMMUNICATIONS, 1995, 96 (11) : 839 - 842
  • [43] INFRARED REFLECTION OF ION-IMPLANTED GAAS
    KACHARE, AH
    SPITZER, WG
    JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 2938 - 2946
  • [44] EXTENDED DEFECTS OF ION-IMPLANTED GAAS
    JONES, KS
    ALLEN, EL
    ROBINSON, HG
    STEVENSON, DA
    DEAL, MD
    PLUMMER, JD
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (11) : 6790 - 6795
  • [45] INVESTIGATION OF COMPENSATION IN IMPLANTED N-GAAS
    RAO, EVK
    DUHAMEL, N
    FAVENNEC, PN
    LHARIDON, H
    JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3898 - 3905
  • [46] PHOTOLUMINESCENCE OF RADIATION DEFECTS IN ION-IMPLANTED H-6 SIC
    PATRICK, L
    CHOYKE, WJ
    PHYSICAL REVIEW B, 1972, 5 (08): : 3253 - &
  • [47] ELLIPSOMETRIC INVESTIGATION OF ION-IMPLANTED GAAS
    KIM, Q
    PARK, YS
    SURFACE SCIENCE, 1980, 96 (1-3) : 307 - 318
  • [48] CAPLESS ANNEALING OF ION-IMPLANTED GAAS
    IMMORLICA, AA
    EISEN, FH
    APPLIED PHYSICS LETTERS, 1976, 29 (02) : 94 - 95
  • [49] RAMAN SCATTERING OF ION-IMPLANTED GAAS
    PEERCY, PS
    APPLIED PHYSICS LETTERS, 1971, 18 (12) : 574 - &
  • [50] CHARACTERIZATION OF ION-IMPLANTED GAAS BY ELLIPSOMETRY
    KIM, Q
    PARK, YS
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 2024 - 2029
12345