Photoacoustic and photoluminescence studies of H+ ion-implanted n-GaAs

被引：2

作者：

Srinivasan, R

Sanjeeviraja, C

Ramachandran, K ^{[1
]}

机构：

[1] Madurai Kamaraj Univ, Sch Phys, Madurai 625021, Tamil Nadu, India

[2] Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India

[3] Thiagarajar Coll, Dept Phys, Madurai 625009, Tamil Nadu, India

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 03期

关键词：

D O I：

10.1002/pssa.200406931

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The surface of silicon-doped GaAs (100) grown by the vertical Bridgman method has been implanted with H+ ions at 30 keV for various doses from 10(14) to 10(17) cm(-2) and studied using photoacoustic and photoluminescence spectroscopy to understand the effects of hydrogen ion implantation on GaAs:Si. The results are compared with Raman measurements. All the measurements confirm the sign change of charge carriers at a dose of 10(15) cm(-2). (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：419 / 424

页数：6

共 50 条

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