Geometric variations and magnetic field effects on electron energy states of InAs/GaAs quantum rings

被引:5
作者
Li, YM [1 ]
Lu, HM
机构
[1] Natl Nano Devices Labs, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Microelect & Informat Syst Res Ctr, Hsinchu 300, Taiwan
[3] Univ Illinois, Dept Bioengn, Chicago, IL 60612 USA
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 4B期
关键词
quantum rings; electron energy states; magnetic field; magnetization; modeling and simulation;
D O I
10.1143/JJAP.42.2404
中图分类号
O59 [应用物理学];
学科分类号
摘要
We study electron energy states in three-dimensional (313) narrow-gap semiconductor quantum rings with ellipsoidal-shape torus (EST) and cut-bottom EST (CBEST) under an applied magnetic field. Our model includes the effective one-electronic-band Hamiltonian, the energy- and position-dependent electron effective mass approximation, and the Ben Daniel-Duke boundary condition. It is solved by the nonlinear iterative method to obtain a "self-consistent" solution numerically. The electron energy dependence on the inner radius, height, and lateral width is investigated for InAs/GaAs quantum rings with EST and CBE T shapes. The height and lateral width play a crucial role in varying the energy spectra of the rings. When the magnetic field is applied on a fixed-size CBEST ring, we find that there is a nonperiodical transition among the lowest electron energy states. Compared with the well-known ID Aharonov-Bohm periodical oscillation, the electron energy levels increase and oscillate nonperiodically when the magnetic field is increased. Our calculation for single-electron magnetization shows that the magnetization is nonperiodical and is a negative function of magnetic field.
引用
收藏
页码:2404 / 2407
页数:4
相关论文
共 20 条
[1]  
Bastard G., 1988, WAVE MECH APPL SEMIC
[2]   Quantum dot lasers: breakthrough in optoelectronics [J].
Bimberg, D ;
Grundmann, M ;
Heinrichsdorff, F ;
Ledentsov, NN ;
Ustinov, VM ;
Zhukov, AE ;
Kovsh, AR ;
Maximov, MV ;
Shernyakov, YM ;
Volovik, BV ;
Tsatsul'nikov, AF ;
Kop'ev, PS ;
Alferov, ZI .
THIN SOLID FILMS, 2000, 367 (1-2) :235-249
[3]   Wetting droplet instability and quantum ring formation [J].
Blossey, R ;
Lorke, A .
PHYSICAL REVIEW E, 2002, 65 (02)
[4]   Semiconductor quantum rings:: Shallow-donor levels [J].
Bruno-Alfonso, A ;
Latgé, A .
PHYSICAL REVIEW B, 2000, 61 (23) :15887-15894
[5]   ELECTRON-ELECTRON INTERACTION AND THE PERSISTENT CURRENT IN A QUANTUM RING [J].
CHAKRABORTY, T ;
PIETILAINEN, P .
PHYSICAL REVIEW B, 1994, 50 (12) :8460-8468
[6]  
CHUANG SL, 1995, PHYSICS OPTOELECTRIC
[7]   Far-infrared spectroscopy of nanoscopic InAs rings [J].
Emperador, A ;
Pi, M ;
Barranco, M ;
Lorke, A .
PHYSICAL REVIEW B, 2000, 62 (07) :4573-4577
[8]   Quantum dot heterostructures: fabrication, properties, lasers (Review) [J].
Ledentsov, NN ;
Ustinov, VM ;
Shchukin, VA ;
Kop'ev, PS ;
Alferov, ZI ;
Bimberg, D .
SEMICONDUCTORS, 1998, 32 (04) :343-365
[9]   Effect of shape and size on electron transition energies of InAs semiconductor quantum dots [J].
Li, YM ;
Voskoboynikov, O ;
Lee, CP ;
Sze, SM ;
Tretyak, O .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (4B) :2698-2700
[10]   Electron energy state dependence on the shape and size of semiconductor quantum dots [J].
Li, YM ;
Voskoboynikov, O ;
Lee, CP ;
Sze, SM ;
Tretyak, O .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (12) :6416-6420