The effect of impurity atoms on the multiplication of edge dislocations

被引：1
|
作者：
Vlasov, NM
Zaznoba, VA
机构：
来源：
TECHNICAL PHYSICS | 2001年 / 46卷 / 01期
关键词：
Atmosphere; Theoretical Analysis; Multiplication Mechanism; Impurity Atom; Edge Dislocation;
D O I：
10.1134/1.1340885
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The multiplication of edge dislocations in impurity atmospheres was studied. Impurities pin a dislocation line, so that additional stress must be applied to "drive" a multiplication mechanism. An expression for diffusion redistribution of impurity atoms along a dislocation segment due to the nonuniform chemical potential was derived. The early stage of moderate-temperature creep is qualitatively explained in terms of theoretical analysis. (C) 2001 MAIK "Nauka/Interperiodica".
引用
收藏
页码：51 / 54
页数：4
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