High frequency high breakdown voltage GaN transistors

被引：0

作者：

Medjdoub, F. ^{[1
]}

Herbecq, N. ^{[1
]}

Linge, A. ^{[1
]}

Zegaoui, M. ^{[1
]}

机构：

[1] Inst Elect Microelect & Nanotechnol IEMN, UMR CNRS 8520, F-59652 Villeneuve Dascq, France

来源：

2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2015年

关键词：

HEMTS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, high performance ultrathin barrier GaN devices for high frequency applications are presented. In particular, key features to achieve significant breakdown voltages and high robustness while using sub-10 nm barrier thickness are discussed. It is shown that the thickness of the in-situ SiN cap layer is critical for highly scaled GaN devices in order to avoid parasitic leakage current subsequent to the extra SiN ex-situ passivation.

引用

页数：4

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