Nanoindentation and deformation properties of nanoscale silicon carbide films on silicon substrate

被引：16

作者：

Grashchenko, A. S. ^{[1
]}

Kukushkin, S. A. ^{[1
,2
]}

Osipov, A. V. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Problems Mech Engn, St Petersburg 199178, Russia

[2] St Petersburg State Polytech Univ, St Petersburg 195251, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2014年 / 40卷 / 12期

基金：

俄罗斯基础研究基金会;

关键词：

THIN-FILMS;

D O I：

10.1134/S1063785014120268

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a model to describe the microhardness of a nanoscale film-substrate system as a function of the depth of indenter penetration. The proposed model has been used to study the deformation characteristics of a nanometer-thick silicon carbide (SiC) grown on a silicon substrate by the method of atomic substitution. The microhardness of as-grown SiC film and a modified silicon layer has been determined. The SiC film thickness has been determined using the nanoindentation technique. The data of nanoindentation are in good agreement with the results of ellipsometric measurements.

引用

页码：1114 / 1116

页数：3

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