Self-Assembled Metallic Nanowire-Based Vertical Organic Field-Effect Transistor

被引：62

作者：

Ben-Sasson, Ariel J. ^{[1
]}

Azulai, Daniel ^{[2
]}

Gilon, Hagit ^{[2
]}

Facchetti, Antonio ^{[3
]}

Markovich, Gil ^{[2
]}

Tessler, Nir ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, Sara & Moshe Zisapel Nanoelect Ctr, IL-32000 Haifa, Israel

[2] Tel Aviv Univ, Raymond & Beverly Sackler Fac Exact Sci, Sch Chem, IL-69978 Tel Aviv, Israel

[3] Polyera Corp, Skokie, IL 60077 USA

来源：

ACS APPLIED MATERIALS & INTERFACES | 2015年 / 7卷 / 04期

基金：

以色列科学基金会;

关键词：

nanowires; self assembly; vertical FETs; organic electronics; transparent electrodes; TRANSPARENT; ARCHITECTURE; PERFORMANCE; NETWORKS; PHYSICS;

D O I：

10.1021/am505174p

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on in situ, self-assembly, solution-processing of metallic (Au/Ag) nanowire-based transparent electrodes integrated to vertical organic field-effect transistors (VOFETs). In the VOFET architecture, the nanowires microstructure facilitates current modulation by the gate across the otherwise shielding sandwiched source electrode. We show N-type VOFETs operation with on/off ratio similar to 1 x 10(5) and high current density (>1 mA cm(-2) at VDS = 5 V). The integration of the device design and the transparent electrode deposition methods offers a potential route for all-solution processing-based, large-area, high-efficiency organic electronics.

引用

页码：2149 / 2152

页数：4

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