High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W

被引:6
作者
Ren, Zhanqiang [1 ]
Li, Qingmin [1 ]
Li, Bo [1 ]
Song, Kechang [1 ]
机构
[1] Xian Lumcore Optoelect Technol Co Ltd, Xian 710077, Peoples R China
关键词
high power semiconductor lasers; high wall-plug efficiency; COMD;
D O I
10.1088/1674-4926/41/3/032901
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A very highly efficient InGaAlAs/AlGaAs quantum-well structure was designed for 808 nm emission, and laser diode chips 390-mu m-wide aperture and 2-mm-long cavity length were fabricated. Special pretreatment and passivation for the chip facets were performed to achieve improved reliability performance. The laser chips were p-side-down mounted on the AlN sub-mount, and then tested at continuous wave (CW) operation with the heat-sink temperature setting to 25 degrees C using a thermoelectric cooler (TEC). As high as 60.5% of the wall-plug efficiency (WPE) was achieved at the injection current of 11 A. The maximum output power of 30.1 W was obtained at 29.5 A when the TEC temperature was set to 12 degrees C. Accelerated life-time test showed that the laser diodes had lifetimes of over 62 111 h operating at rated power of 10 W.
引用
收藏
页数:3
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