Higher Gate Capacitance Ge n-MOSFETs Using Laser Annealing

被引：17

作者：

Chen, W. B. ^{[1
]}

Shie, B. S. ^{[1
]}

Chin, Albert ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 04期

关键词：

Annealing; gate dielectric; Ge; high-kappa; laser; GERMANIUM; SOURCE/DRAIN; ENHANCEMENT; PERFORMANCE;

D O I：

10.1109/LED.2011.2106478

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By applying laser annealing (LA) on both gate dielectrics and source/drain activation, the TaN/ZrO2/La2O3/SiO2 on Ge n-MOSFETs shows a high gate capacitance density, a small n(+)/p-junction ideality factor of 1.10, a small subthreshold swing (SS) of 106 mV/dec, and a good high-field mobility of 285 or 340 cm(2)/V . s after gate leakage correction at 1 MV/cm, at a small 0.95-nm equivalent oxide thickness (EOT). To the best of our knowledge, this is the first demonstration of significantly high gate capacitance in MOSFETs by LA. This is also the highest 1-MV/cm mobility at the smallest EOT of Ge n-MOSFETs and better than the SiO2/Si universal mobility.

引用

页码：449 / 451

页数：3

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