Impedance measurements in undoped and doped regioregular poly(3-hexylthiophene)

被引：7

作者：

Mandal, Sougata ^{[1
]}

Menon, Reghu ^{[1
]}

机构：

[1] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2020年 / 53卷 / 21期

关键词：

poly(3-hexylthiophene); impedance spectroscopy; Nyquist plot; doping; CHARGE-TRANSPORT; ABSORPTION; INJECTION; POLYMERS; MOBILITY;

D O I：

10.1088/1361-6463/ab7959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The semiconducting properties of regioregular poly(3-hexylthiophene) are characterized by impedance measurements, from 40 Hz to 100 MHz. X-ray diffraction shows the presence of both ordered and disordered regions. The analysis of impedance data by Nyquist plots show two semi-circular arcs, and their size is reduced by dc bias. Also, the carrier variation by light and chemical doping alters the shape and size of arcs. The fits to the data and equivalent circuits show considerable changes in the resistive, capacitive and constant-phase element parameters as the carrier density increases. The increase in carrier density reduces the relaxation time in ordered regions, and it does not alter much in disordered regions.

引用

页数：8

共 34 条

[1] Carrier density-dependent transport in poly(3-methylthiophene): from injection-limited to space-charge-limited current [J].