Effect of substrate temperature and post annealing temperature on ZnO:Zn PLD thin film properties

被引:23
作者
Hasabeldaim, E. [1 ]
Ntwaeaborwa, O. M. [1 ]
Kroon, R. E. [1 ]
Coetsee, E. [1 ]
Swart, H. C. [1 ]
机构
[1] Univ Free State, Dept Phys, ZA-9300 Bloemfontein, South Africa
基金
新加坡国家研究基金会;
关键词
PLD thin films; ZnO:Zn; Optical properties; XPS; Substrate temperature; Post-annealing treatments; PHOTOLUMINESCENCE PROPERTIES; EMISSION; ORIGIN; GREEN;
D O I
10.1016/j.optmat.2017.03.027
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The pulsed laser deposition (PLD) substrate temperature and post-annealing temperature are effective methods to control the film optical and structural properties. The structure, morphology and optical properties of the deposited and post-annealed PLD ZnO:Zn films were studied. The films were deposited at different substrate temperatures of 50 degrees C, 200 degrees C and 400 degrees C. The films deposited at the substrate temperature of 50 degrees C and 200 degrees C were post-annealed in air at 400 degrees C and 600 degrees C for two hours. The films all had a highly preferential orientation with the hexagonal c-axis perpendicular to the substrate surface. The stress was found to be compressive stress with values -3.289 GPa, -4.864 GPa and -4.425 GPa for the film deposited at 50 degrees C, 200 degrees C and 400 degrees C, respectively. After post-annealing treatments, the stress of the films was almost completely released and stress-free films were obtained. The crystallite sizes were 19 nm, 25 nm and 39 nm, while the average particles sizes were 95 nm, 85 nm and 129 nm for the film deposited at 50 degrees C, 200 degrees C and 400 degrees C respectively. The crystallite sizes and particles sizes seemed to increase with the increase in the substrate temperature. Contrary to this, the change in crystallite sizes were inversely proportional to the particles size when increasing the post-annealing temperatures. Deconvoluted X-ray photoelectron spectroscopy peaks of the O1s binding energy region revealed that the films deposited at different substrate temperatures contained oxygen-related defects. Photoluminescence studies revealed that the films all emitted ultra-violet emission around 379 nm. The film deposited at 50 degrees C emitted a broad green emission centered at similar to 524 nm. By increasing the substrate temperature up to 200 degrees C and 400 degrees C a new orange emission around 621 nm and 634 nm as well as a weak emission around 416 nm and 500 nm were observed, respectively. After post-annealing treatments, new bands over the visible region (blue, green and orange-red) were observed, the orange-red emissions at similar to 626 nm to 681 nm being dominant for the annealed samples. The defects-related visible emission was discussed in detail and it was in good agreement with previous studies. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:139 / 149
页数:11
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