A Novel, High-Dynamic-Range, High-Speed, and High-Sensitivity CMOS Imager Using Time-Domain Single-Photon Counting and Avalanche Photodiodes

被引：21

作者：

El-Desouki, Munir M. ^{[1
]}

Palubiak, Darek ^{[1
]}

Deen, M. Jamal ^{[1
]}

Fang, Qiyin ^{[2
]}

Marinov, Ognian ^{[1
]}

机构：

[1] McMaster Univ, Dept Elect & Comp Engn, Hamilton, ON L8S 4K1, Canada

[2] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4K1, Canada

来源：

IEEE SENSORS JOURNAL | 2011年 / 11卷 / 04期

关键词：

Avalanche photodiodes (APDs); CMOS image sensor; integrated photodetector; silicon avalanche photodiode (SAPD); silicon photodetector; single-photon detectors; single-photon avalanche detectors (SPADs); time-domain (TD) image sensor; PIXEL SENSOR; TECHNOLOGY; CIRCUIT; ARRAY;

D O I：

10.1109/JSEN.2010.2058846

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Avalanche photodiodes used in Geiger mode as single-photon counters have become very attractive imaging tools. High-speed single-photon imaging can be used in very low-light-level applications such as surveillance and security imaging, quantum computing, and biomedical imaging including bioluminescence and fluorescence lifetime imaging. However, a typical avalanche-based single-photon detector cannot offer the high dynamic range that is needed for many biomedical and surveillance applications. In this paper, we show how a single-photon detector can be used in time domain for high-dynamic-range applications. We also discuss novel techniques to implement the time-domain single-photon imager in mainstream deep-submicrometer CMOS technology. The designed imager offers high dynamic range and high sensitivity, while maintaining high-speed operation and low cost.

引用

页码：1078 / 1083

页数：6

共 13 条

[1] A multisampling time-domain CMOS imager with synchronous readout circuit [J].

Campos, Fernando S. ;

Marinov, Ognian ;

Faramarzpour, Naser ;

Saffih, Faycal ;

Deen, M. Jamal ;

Swart, Jacobus W. .

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2008, 57 (1-2) :151-159

[2]

ELDESOUKI MM, 2010, P EL SOC 217 M VANC

[3] Fully integrated single photon avalanche diode detector in standard CMOS 0.18-μm technology [J].

Faramarzpour, Naser ;

Deen, M. Jarnal ;

Shirani, Shahram ;

Fang, Qiyin .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (03) :760-767

[4] An approach to improve the signal-to-noise ratio of active pixel sensor for low-light-level applications [J].

Faramarzpour, Naser ;

Deen, M. Jamal ;

Shirani, Shahram .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (09) :2384-2391

[5] CMOS photodetector systems for low-level light applications [J].

Faramarzpour, Naser ;

El-Desouki, Munir M. ;

Deen, M. Jamal ;

Shirani, Shahram ;

Fang, Qiyin .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2009, 20 :87-93

[6] Performance trade-offs in single-photon avalanche diode miniaturization [J].

Finkelstein, Hod ;

Hsu, Mark J. ;

Zlatanovic, Sanja ;

Esener, Sadik .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2007, 78 (10)

[7] A digital pixel sensor array with programmable dynamic range [J].

Kitchen, A ;

Bermak, A ;

Bouzerdoum, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (12) :2591-2601

[8] Single photon avalanche photodetector with integrated quenching fabricated in TSMC 0.18 μm 1.8 VCMOS process [J].

Marwick, M. A. ;

Andreou, A. G. .

ELECTRONICS LETTERS, 2008, 44 (10) :643-U42

[9] First fully integrated 2-D array of single-photon detectors in standard CMOS technology [J].

Rochas, A ;

Gösch, M ;

Serov, A ;

Besse, PA ;

Popovic, RS ;

Lasser, T ;

Rigler, R .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2003, 15 (07) :963-965

[10] Single-Photon Avalanche Diode CMOS Sensor for Time-Resolved Fluorescence Measurements [J].

Stoppa, David ;

Mosconi, Daniel ;

Pancheri, Lucio ;

Gonzo, Lorenzo .

IEEE SENSORS JOURNAL, 2009, 9 (09) :1084-1090

← 1 2 →