Epitaxial κ-(AlxGa1-x)2O3 thin films and heterostructures grown by tin-assisted VCCS-PLD

被引：32
|
作者：
Storm, P. [1 ]
Kneiss, M. [1 ]
Hassa, A. [1 ]
Schultz, T. [2 ,3 ]
Splith, D. [1 ]
von Wenckstern, H. [1 ]
Koch, N. [2 ,3 ]
Lorenz, M. [1 ]
Grundmann, M. [1 ]
机构：
[1] Univ Leipzig, Felix Bloch Inst Solid State Phys, Linnestr 5, D-04103 Leipzig, Germany
[2] Humboldt Univ, Dept Phys, Newtonstr 15, D-12489 Berlin, Germany
[3] Helmholtz Zentrum Berlin Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany
来源：
APL MATERIALS | 2019年 / 7卷 / 11期
关键词：
EPSILON-GA2O3; RELAXATION; DEPOSITION; PRESSURE;
D O I：
10.1063/1.5124231
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The structural, surface, and optical properties of phase-pure kappa-(AlxGa1-x)(2)O-3 thin films on c-sapphire and STO(111):Nb substrates as well as on MgO(111) and kappa-Ga2O3 templates are reported as a function of alloy composition for x < 0.4. The thin films were grown by tin-assisted pulsed laser deposition (PLD). For the variation of the Al-content, we utilized radially segmented PLD targets that enable the deposition of a thin film material library by discrete composition screening. Growth on kappa-Ga2O3 (001) thin film templates enhanced the phase pure growth window remarkably up to x = 0.65. The crystallization of the kappa-phase was verified by X-ray diffraction 2 theta-omega-scans for all samples. Both in- and out-of-plane lattice constants in dependence on the Al-content follow a linear relationship according to Vegard's law over the complete composition range. Atomic force microscope measurements confirm smooth surfaces (R-q approximate to 1.4 nm) for all investigated Al-contents. Furthermore, bandgap tuning from 4.9 eV to 5.8 eV is demonstrated and a linear increase in the bandgap with increasing Al-content was observed. (C) 2019 Author(s).
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页数：8
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