Vth-shiftable SRAM Cell TEGs for Direct Measurement for the Immunity of the Threshold Voltage Variability

被引:0
作者
Yamaguchi, Shogo [1 ]
Imi, Hitoshi [1 ]
Tokumaru, Shogo [1 ]
Kondo, Takahiro [1 ]
Yamamoto, Hiromasa [1 ]
Nakamura, Kazuyuki [1 ]
机构
[1] Kyushu Inst Technol, Ctr Microelect Syst, 680-4 Kawazu, Iizuka, Fukuoka 8208502, Japan
来源
2017 INTERNATIONAL CONFERENCE OF MICROELECTRONIC TEST STRUCTURES (ICMTS) | 2017年
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页数:3
相关论文
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Chang L., 2005, S VLSI, P292
[2]  
Kondo T., 2014, INT C SOLID STAT DEV, P82
[3]  
Okamura H., 2013, IEEE INT C MICR TEST
[4]  
Saito T, 2012, IEEE INT MEM WORKSH
[5]  
Seevinck E., 1987, IEEE J SOLID STATE C, Vsc-22