Proposed design principle of fluoride-based materials for deep ultraviolet light emitting devices

被引：45

作者：

Sarukura, Nobuhiko

Murakami, Hidetoshi

Estacio, Elmer

Ono, Shingo

El Ouenzerfi, Riadh

Cadatal, Marilou

Nishimatsu, Takeshi

Terakubo, Noriaki

Mizuseki, Hiroshi

Kawazoe, Yoshiyuki

Yoshikawa, Akira

Fukuda, Tsuguo

机构：

[1] Osaka Univ, Inst Laser Engn, Osaka 5650871, Japan

[2] Nagoya Inst Technol, Nagoya, Aichi 4668555, Japan

[3] Inst Mol Sci, Okazaki, Aichi 4448585, Japan

[4] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[5] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

OPTICAL MATERIALS | 2007年 / 30卷 / 01期

关键词：

ultraviolet laser diode; light emitting diode; band structure; perovskite fluorides;

D O I：

10.1016/j.optmat.2006.11.031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, the design principle of fluoride-based devices for deep ultraviolet emission is presented. Variations in band structure and lattice constant of LiBaxCaySr(1-x-y)F3 and Li(1-x)KxBa(1-y)MgyF3 are studied using ab initio calculations based oil local density approximation. Results suggest that lattice-matched double-heterostructures of direct-band-gap compounds LiBaxCaySr(1-x-y)F3 On LiSrF3 and Li(1-x)KxBa(1-y)MgyF3 on either LiBaF3 or KMgF3 are sufficiently feasible to fabricate. (c) 2006 Elsevier B.V. All rights reserved.

引用

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页码：15 / 17

页数：3

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