SAW Devices Manufactured on GaN/Si for Frequencies Beyond 5 GHz

被引：41

作者：

Mueller, Alexandru ^{[1
]}

Neculoiu, Dan ^{[2
]}

Konstantinidis, George ^{[3
]}

Deligeorgis, George ^{[4
]}

Dinescu, Adrian ^{[1
]}

Stavrinidis, Antonis ^{[3
]}

Cismaru, Alina ^{[1
]}

Dragoman, Mircea ^{[1
]}

Stefanescu, Alexandra ^{[1
]}

机构：

[1] IMT Bucharest, Bucharest 07719, Romania

[2] Univ Politehn Bucuresti, Fac Elect Telecommun & Informat Technol, Bucharest 060042, Romania

[3] FORTH IESL, Iraklion 71110, Greece

[4] CNRS, LAAS, F-31077 Toulouse, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 12期

关键词：

E-beam nanolithography; interdigitated transducers (IDTs); surface acoustic wave (SAW); SURFACE ACOUSTIC-WAVES;

D O I：

10.1109/LED.2010.2078484

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter describes the manufacture and characterization of surface acoustic wave (SAW) devices on GaN/Si devoted to applications above the 5-GHz frequency range. The SAW structures consist of two face-to-face interdigitated transducers (IDTs), placed at different distances. Using a TiAu metallization, 80-nm-thick and advanced e-beam lithographical techniques with IDTs with fingers and spacings 200 nm wide have been obtained on the GaN layer. On wafer measurement of the S parameters have demonstrated the operation at approximately 5.6 GHz. The frequency response of the devices is explained in detail.

引用

页码：1398 / 1400

页数：3

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