S-Shaped J-V characteristic of a-Si:H/c-Si heterojunction solar cell

被引：1

作者：

Zhong Chun-Liang ^{[1
]}

Geng Kui-Wei ^{[1
]}

Yao Ruo-He ^{[1
]}

机构：

[1] S China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Peoples R China

来源：

ACTA PHYSICA SINICA | 2010年 / 59卷 / 09期

关键词：

simulation; solar cell; a-Si:H/c-Si heterojunction; BAND OFFSETS;

D O I：

10.7498/aps.59.6538

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this paper the physical mechanism of the S-shaped J-V characteristics of (p) a-Si: H/(n) c-Si heterojunction solar cell at low working temperatures, low impurity concentrations in the a-Si :H layer, high valence band offsets or high interface defect densities is studied by heterojunction interface analysis and AMPS simulations. The results show that the barrier at the amorphous/crystalline interface hinders the collection of photogenerated holes. A high hole accumulation at the interface, in combination, causes a shift of the depletion region from the c-Si into the a-Si: H. This leads to the electric field decreasing, and the enhanced recombination inside the c-Si depletion region causes a significant current loss. It results in the S-shaped J-V characteristics.

引用

页码：6538 / 6544

页数：7

共 21 条

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