Resistivity Reduction and Adhesion Increase Induced by Surface and Interface Segregation of Ti Atoms in Cu(Ti) Alloy Films on Glass Substrates

Low resistivity and excellent adhesion Cu(Ti) alloy films were prepared on glass substrates Cu(0 3 similar to 4 at%Ti) alloy films were deposited on the substrates and subsequently annealed in vacuum at 400 degrees C for 3h Resistivity of the annealed Cu(Ti) alloy films was significantly reduced to about 2 8 mu Omega cm Tensile strength of the Cu(Ti)/glass interface increased to about 60 MPa after annealing The low resistivity and excellent adhesion resulted from Ti segregation at the film surf ace and the Cu(Ti)/glass interface The segregated Ti atoms reacted with atmospheric oxygen at the surface and with oxygen in glass and/or from atmosphere at the interface and formed a TiO2 layer at the surface and a TiO2 layer with a mall amount of Ti2O3 ancl TiO at the interface The Flyers ss er non-crystalline Columnar grains in the alloy films were seen to enhance Ti segregation and subsequent Cu grain growth The Cu grain growth also contributed to low resistivity of Cu(Ti) alloy films [doi 10 2320/matertrans MAW201033]