Fabrication of Poly-Si on Locally Etched SiOx as Passivating Contacts for c-Si Solar Cells

被引：0

作者：

Salles, Caroline Lima ^{[1
,2
]}

Nemeth, William ^{[2
]}

Guthrey, Harvey ^{[2
]}

Agarwal, Sumit ^{[1
,2
]}

Stradins, Paul ^{[2
]}

机构：

[1] Colorado Sch Mines, Golden, CO 80401 USA

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2021年

关键词：

mesopore; MACE; amorphous Si; passivating contact; polycrystalline Si contact; SILICON;

D O I：

10.1109/PVSC43889.2021.9518647

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Polysilicon on silicon oxide (poly-Si/SiOx) passivating contacts with predominant charge-carrier transport via pinholes were prepared with room temperature metal-assisted chemical etching. Pinhole areal densities in the range of 2.8x10(4) to 4.5x10(7) cm(-2) were imaged by SEM. Contact resistivity of 32 m-ohm-cm(2) and implied open circuit voltage of 729 mV were obtained for symmetric n+ poly-Si/SiOx grown onto randomly textured n-Cz. We also show preliminary data pertaining boron-doped polysilicon on nitride/oxide passivating contacts, with which we achieved implied open circuit voltage above 730 mV and recombination current of 0.2 fA/cm(2).

引用

页码：134 / 136

页数：3

共 8 条

[1] Metal-assisted chemical etching of silicon in HF-H2O2 [J].