Channel thickness dependence of the magnetic properties in (Ga,Mn)As FET structures

被引：3

作者：

Endo, M.

Chiba, D.

Nishitani, Y.

Matsukura, F.

Ohno, H.

机构：

[1] Tohoku Univ, Res Inst Elect Commun, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Japan Sci & Technol Agcy, Semicond Spintron Project, Sendai, Miyagi 9800023, Japan

来源：

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM | 2007年 / 20卷 / 06期

关键词：

(Ga; Mn)As; Curie temperature; electric field-effect control of ferromagnetism; ferromagnetic semiconductor; p-d Zener model;

D O I：

10.1007/s10948-007-0242-7

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated a series of field-effect transistor structures with a thin (Ga,Mn)As channel with thickness t of 3.5, 4.0, 4.5, and 5.0 nm, and investigated the effect of electric-field E on their magnetic properties. The Curie temperature T (C) showed a clear dependence on the magnitude of E, and its controllable range became larger with decreasing t and reached 15 K for the device with t=3.5 nm, which corresponded to 32% of T (C) of the layer.

引用

页码：409 / 411

页数：3

共 50 条

[41] Magnetic properties of Mn doped BN compound
Boukra, A.
Zaoui, A.
Ferhat, M.
SUPERLATTICES AND MICROSTRUCTURES, 2012, 52 (04) : 880 - 884
[42] Improved tunneling magnetoresistance in (Ga,Mn)As/AlOx/CoFeB magnetic tunnel junctions
Yu, G. Q.
Chen, L.
Rizwan, Syed
Zhao, J. H.
Xu, K.
Han, X. F.
APPLIED PHYSICS LETTERS, 2011, 98 (26)
[43] Structural Quality and Magnetotransport Properties of Epitaxial Layers of the (Ga,Mn)(Bi,As) Dilute Magnetic Semiconductor
Andrearczyk, Tomasz
Levchenko, Khrystyna
Sadowski, Janusz
Domagala, Jaroslaw Z.
Kaleta, Anna
Dluzewski, Piotr
Wrobel, Jerzy
Figielski, Tadeusz
Wosinski, Tadeusz
MATERIALS, 2020, 13 (23) : 1 - 14
[44] Enhancement of TC of the (Ga,Mn) As diluted magnetic semiconductor by photoinduced exchange coupling of the Mn2+ spins
Amente, Chernet
Singh, P.
INTERNATIONAL JOURNAL OF THE PHYSICAL SCIENCES, 2010, 5 (06): : 671 - 674
[45] Annealing effect on magnetic anisotropy in ultrathin(Ga,Mn)As
李炎勇
汪华锋
曹玉飞
王开友
Chinese Physics B, 2013, (02) : 473 - 477
[46] MBE growth and properties of room-temperature (Ga,Mn)N-Mn4N granular magnetic semiconductors
Nakayama, H
Mashita, H
Kulatov, E
Funahashi, R
Ohta, H
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2003, 258 : 323 - 325
[47] Martensite transformation and magnetic property dependence on the annealing temperature in Ni-rich Ni-Mn-Ga alloy
Singh, R. K.
Gopalan, R.
FERROMAGNETIC SHAPE MEMORY ALLOYS, 2008, 52 : 57 - 62
[48] Hydrostatic-pressure-induced changes of magnetic anisotropy in (Ga, Mn) As thin films
Gryglas-Borysiewicz, Marta
Juszynski, Piotr
Kwiatkowski, Adam
Przybytek, Jacek
Sadowski, Janusz
Sawicki, Maciej
Tokarczyk, Mateusz
Kowalski, Grzegorz
Dietl, Tomasz
Wasik, Dariusz
JOURNAL OF PHYSICS-CONDENSED MATTER, 2017, 29 (11)
[49] 3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film
Kodzuka, M.
Ohkubo, T.
Hono, K.
Matsukura, F.
Ohno, H.
ULTRAMICROSCOPY, 2009, 109 (05) : 644 - 648
[50] Magnetic domain structure of a ferromagnetic semiconductor (Ga,Mn)As observed with scanning probe microscopes
Fukumura, T
Shono, T
Inaba, K
Hasegawa, T
Koinuma, H
Matsukura, F
Ohno, H
PHYSICA E, 2001, 10 (1-3): : 135 - 138

← 1 2 3 4 5 →