Channel thickness dependence of the magnetic properties in (Ga,Mn)As FET structures

被引：3
|
作者：
Endo, M.
Chiba, D.
Nishitani, Y.
Matsukura, F.
Ohno, H.
机构：
[1] Tohoku Univ, Res Inst Elect Commun, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Japan Sci & Technol Agcy, Semicond Spintron Project, Sendai, Miyagi 9800023, Japan
来源：
JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM | 2007年 / 20卷 / 06期
关键词：
(Ga; Mn)As; Curie temperature; electric field-effect control of ferromagnetism; ferromagnetic semiconductor; p-d Zener model;
D O I：
10.1007/s10948-007-0242-7
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have fabricated a series of field-effect transistor structures with a thin (Ga,Mn)As channel with thickness t of 3.5, 4.0, 4.5, and 5.0 nm, and investigated the effect of electric-field E on their magnetic properties. The Curie temperature T (C) showed a clear dependence on the magnitude of E, and its controllable range became larger with decreasing t and reached 15 K for the device with t=3.5 nm, which corresponded to 32% of T (C) of the layer.
引用
收藏
页码：409 / 411
页数：3
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