Elimination of multimode effects in a silicon-on-insulator etched diffraction grating demultiplexer with bi-level taper structure

被引：15

作者：

Dai, DX ^{[1
]}

He, JJ

He, SL

机构：

[1] Royal Inst Technol, Joint Res Ctr Photon, State Key Lab Modern Opt Instrument, Ctr Opt & Electromagnet Res, Stockholm, Sweden

[2] Zhejiang Univ, Hangzhou 310027, Peoples R China

[3] Royal Inst Technol, Alfven Lab, Div Electromagnet Theory, S-10044 Stockholm, Sweden

[4] Lightip Technol Inc, Ottawa, ON K1K 4R8, Canada

[5] Zhejiang Univ, Dept Opt Engn, Hangzhou 310027, Peoples R China

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2005年 / 11卷 / 02期

关键词：

air slot; crosstalk; etched diffraction grating (EDG); insertion loss; multimode effect; silicon-on-insulator (SOI); taper;

D O I：

10.1109/JSTQE.2005.846543

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Multimode effects in the free propagation region (FPR) of an etched diffraction grating (EDG) demultiplexer based on silicon-on-insulator are analyzed. The insertion loss and the crosstalk increase due to these undesired multimode effects. A bi-level taper structure between the FPR and the input/output waveguides is proposed. It is shown that such a taper structure can reduce the multimode effects to an almost negligible level. At the same time, the 3-dB passband width is enlarged by increasing the rib width. No additional fabrication process is needed for an EDG with such a design.

引用

页码：439 / 443

页数：5