Elimination of multimode effects in a silicon-on-insulator etched diffraction grating demultiplexer with bi-level taper structure

被引:15
作者
Dai, DX [1 ]
He, JJ
He, SL
机构
[1] Royal Inst Technol, Joint Res Ctr Photon, State Key Lab Modern Opt Instrument, Ctr Opt & Electromagnet Res, Stockholm, Sweden
[2] Zhejiang Univ, Hangzhou 310027, Peoples R China
[3] Royal Inst Technol, Alfven Lab, Div Electromagnet Theory, S-10044 Stockholm, Sweden
[4] Lightip Technol Inc, Ottawa, ON K1K 4R8, Canada
[5] Zhejiang Univ, Dept Opt Engn, Hangzhou 310027, Peoples R China
关键词
air slot; crosstalk; etched diffraction grating (EDG); insertion loss; multimode effect; silicon-on-insulator (SOI); taper;
D O I
10.1109/JSTQE.2005.846543
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Multimode effects in the free propagation region (FPR) of an etched diffraction grating (EDG) demultiplexer based on silicon-on-insulator are analyzed. The insertion loss and the crosstalk increase due to these undesired multimode effects. A bi-level taper structure between the FPR and the input/output waveguides is proposed. It is shown that such a taper structure can reduce the multimode effects to an almost negligible level. At the same time, the 3-dB passband width is enlarged by increasing the rib width. No additional fabrication process is needed for an EDG with such a design.
引用
收藏
页码:439 / 443
页数:5
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