The effects of an oxide layer on the kinetics of metal-induced crystallization of a-Si:H

被引:9
作者
Al-Barghouti, M [1 ]
Abu-Safe, H
Naseem, H
Brown, WD
Al-Jassim, M
机构
[1] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA
[2] Natl Renewable Energy Lab, Golden, CO 80401 USA
关键词
D O I
10.1149/1.1878353
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The effect of a native silicon dioxide layer on metal-induced crystallization of hydrogenated amorphous silicon (a-Si:H) was investigated. Several samples, deposited by the plasma-enhanced chemical vapor deposition technique, were exposed to different ambients for different times to allow for the growth of SiO2 layers of different thicknesses. Then, aluminum was used to crystallize the samples using metal-induced crystallization at temperatures far below the solid-phase crystallization temperature of a-Si. In this study, we focused on the effects of the native oxide layer on crystallization and crystallization rates of the samples, as determined by X-ray diffraction. Following crystallization, scanning electron microscopy, environmental scanning electron microscopy, energy dispersive spectroscopy, and atomic force microscopy were used to examine and compare the morphology and chemical composition of the surface of the different samples. Finally, an explanation of the findings is presented. (c) 2005 The Electrochemical Society.
引用
收藏
页码:G354 / G360
页数:7
相关论文
共 50 条
[41]   Influence of precursor a-Si:H dehydrogenation on the aluminum induced crystallization process [J].
Duan, Weiyuan ;
Qiu, Yu ;
Zhang, Liping ;
Yu, Jian ;
Bian, Jiantao ;
Liu, Zhengxin .
MATERIALS CHEMISTRY AND PHYSICS, 2014, 146 (1-2) :141-145
[42]   LASER-INDUCED CRYSTALLIZATION OF A-SI - H THIN-FILMS [J].
HAJTO, J ;
GAZSO, J ;
ZENTAI, G ;
SOMOGYI, IK .
JOURNAL DE PHYSIQUE LETTRES, 1982, 43 (03) :L97-L102
[43]   Aluminum-induced in situ crystallization of HWCVD a-Si:H films [J].
Gupta, Sneha ;
Chelawat, Hitesh ;
Kumbhar, Alka A. ;
Adhikari, Subhra ;
Dusane, Rajiv O. .
THIN SOLID FILMS, 2008, 516 (05) :850-852
[44]   Low Temperature Aluminum Induced Crystallization of HWCVD Deposited a-Si:H [J].
Pandey, Vivek ;
Dusane, R. O. .
2013 INTERNATIONAL CONFERENCE ON ADVANCED NANOMATERIALS AND EMERGING ENGINEERING TECHNOLOGIES (ICANMEET), 2013, :357-359
[45]   a-Si:H/a-SiOx:H microcavities with a-Si(Er):H active layer [J].
Dukin, AA ;
Feoktistov, NA ;
Golubev, VG ;
Medvedev, AV ;
Pevtsov, AB ;
Sel'kin, AV .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 299 :694-698
[46]   Effects of mechanical stress on the growth behaviors of metal-induced lateral crystallization [J].
Song, Nam-Kyu ;
Kim, Min-Sun ;
Han, Shin-Hee ;
Kim, Young-Su ;
Joo, Seung-Ki .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (05) :H370-H373
[47]   Effects of a a-Si:H layer on reducing the dark current of 1310 nm metal-germanium-metal photodetectors [J].
Hwang, J. D. ;
Zhang, E. H. .
THIN SOLID FILMS, 2011, 519 (11) :3819-3821
[48]   Fundamentals of Metal-induced Crystallization of Amorphous Semiconductors [J].
Wang, Zumin ;
Jeurgens, Lars P. H. ;
Wang, Jiang Y. ;
Mittemeijer, Eric J. .
ADVANCED ENGINEERING MATERIALS, 2009, 11 (03) :131-135
[49]   Metal-induced crystallization of amorphous Si1-xGex by rapid thermal annealing [J].
Yu, CH ;
Yeh, PH ;
Cheng, SL ;
Chen, LJ ;
Cheng, LW .
THIN SOLID FILMS, 2004, 469 :356-360
[50]   Metal-induced crystallization - An advanced technology for producing polycrystalline Si films on foreign substrates [J].
Dimova-Malinovska, D .
NANOSTRUCTURED AND ADVANCED MATERIALS FOR APPLICATIONS IN SENSOR, OPTOELECTRONIC AND PHOTOVOLTAIC TECHNOLOGY, 2005, 204 :31-50