Fabrication of n-ZnO/p-GaAs heterojunction and prediction of its luminescence based on photoluminescence study

Self-compensation arising out of non-stoichiometry makes ZnO as-grown n-type. Nonavailability of stable p-type doping with required carrier concentration limits the formation of homojunction of ZnO. Fabrication of semiconductor heterojunction is thus an alternative approach in device fabrication. In the present study n-ZnO has been grown on pGaAs substrates using MOCVD technique. The colour of the light which is supposed to be emitted from the said heterojunction has been predicted to be purplish red from the room temperature photoluminescence study. The corresponding colour temperature is found to be less than 1000 K. Efforts have been made to explain the prediction on the basis of band diagram.