Structures and dielectric properties of multilayer BST/ST/BST and ST/BST/ST sandwich structures

被引：18

作者：

Wang, Si Zhe ^{[1
]}

Liao, Jia Xuan ^{[1
]}

Feng, Ting Ting ^{[1
]}

Hu, Yi Ming ^{[1
]}

Yang, Han Yu ^{[1
]}

Wu, Meng Qiang ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Energy Sci & Engn, Chengdu 610054, Peoples R China

来源：

INTEGRATED FERROELECTRICS | 2016年 / 170卷 / 01期

基金：

中国国家自然科学基金;

关键词：

BST film; ST film; sandwich structure; dielectric properties; THIN-FILMS; MN; MICROSTRUCTURE;

D O I：

10.1080/10584587.2016.1170513

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Multilayer thin films with sandwich structures of BST/ST/BST and ST/BST/ST were designed and prepared by sol-gel method on Pt/Ti/SiO2/Si substrates, and their structures and dielectric properties have been studied. Pure BST and ST films were also studied for comparison. X-ray diffraction reveals that all films grow along (110) orientation and show polycrystalline cubic perovskite structures. SEM shows that the BST/ST/BST film exhibits smaller grain size and better uniformity than the pure BST film. BST/ST/BST and ST/BST/ST films almost keep significantly high tunable capabilities of 40-50% at low applied voltage of +/- 10 V like the pure BST film, but show lower dielectric losses, resulting in higher figure of merit (FOM). Related mechanisms on such dielectric properties are analyzed by resistor-capacitor (RC) equivalent circuit models. Such sandwich structure design is a novel route for BST films to fulfill the tunable microwave application.

引用

页码：120 / 129

页数：10

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