Cu insertion and diffusion in CuInSe2:: Solid state electrochemical investigations

被引：0
|
作者：
Jean, M
Peulon, S
Guillemoles, JF
Vedel, J
Yakushev, M
Hill, AE
机构：
[1] ENSCP, Lab Electrochim, F-75005 Paris, France
[2] Univ Salford, Dept Phys, Salford M5 4WT, Lancs, England
来源：
TERNARY AND MULTINARY COMPOUNDS | 1998年 / 152卷
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Using a CuInSe2/Cu4RbC15/Cu solid State cell, we have studied the introduction and extraction of Cu in the host lattice. This enabled to present the first experimental measurements of the formation energies of Cu-related point defects.
引用
收藏
页码：201 / 204
页数：4
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